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European Roadmap for Wide Bandgap Semiconductors

Widgap is an effort to develop a unified roadmap for wide bandgap semiconductors, specifically SiC and GaN. FhG IISB, WTC, Linköping University and CNRS CRHEA carry out this project with the collaboration of the European industry. The project is funded by the European Commission within the 6th Framework Programme.

Wide bandgap semiconductors, as their name implies, have bandgaps of 3 to 6 eV compared to 1.1 eV for Si. This superior material properties translate in higher performance of optoelectronic, RF and power devices.

The task of Widgap is assess what applications can most benefit from SiC and GaN devices and when. The study of business model for the development of a European wide bandgap industry and the conditions for the success of SiC and GaN deives is is also part of the work. Widgap will focus on:

• wafers
• transistors for RF and power
• solid state lighting

Last updated: April 28, 2007 — WTC - Wicht Technologie Consulting