Partners

www.iisb.fhg.de

The Fraunhofer Institute for Integrated Circuit and Device Technology (IISB) is the coordinator of Widgap. The IISB develops equipment, processes and simulation tools for semiconductor manufacturing. As a centre of competence for power electronics, IISB develops power electronic devices and systems — from discrete diodes up to complex prototypes for switch-mode power supplies, drives etc.
Two departments of IISB are directly involved in the development of wide bandgap semiconductors:

• The Crystal Growth Department develops processes for the growth of GaN substrates
• The Technology Department develops substrates and doping processes for SiC

www.wtc-consult.de

Wicht Technologie Consulting is the technical coordinator of the project. WTC carries out market analysis, technology assessment and strategic planning for companies and organisations involved in microsystems, electronics and materials. WTC has gained international reputation for its in-depth knowledge and its ability to explain the technical, economic and competitive issues that influence supply and demand in these rapidly changing industries.
WTC has extensive experience in the field of roadmapping (e.g. thin wafers, OLEDs, RF-MEMS, microfluidics) and benchmarking (e.g. German MEMS start-up, maskless lithography suppliers, MEMS packaging). WTC developed several databases (European MEMS R&D projects, nanotechnology start-ups, RF-MEMS suppliers, German RFID industry). It also regularly organises seminars and conferences, e.g. at Semicon Europe, electronica.

www.ifm.liu.se

The Department of Physics and Measurement Technology, Biology and Chemistry (IFM) at Linköpings Universitet employs 330 people. The department houses among others the Swedish Sensor Centre and the Silicon Carbide Materials research programme (SiCMAT).
The research activities in the Materials Science Division (~20 people and about as many students) include:

• preparation and characterization of epitaxial films and bulk material of SiC and III-nitrides with chemical vapor deposition (CVD), liquid phase epitaxy (LPE) and sublimation techniques
• studies of properties of defects in semiconductors
• studies of the electronic properties of semiconductor quantum structures
• studies of bulk and surface bandstructure, geometrical surface structure and adsorption

There is a strong international cooperation within most research projects. IFM participates in the two currently running EU projects related to GaN and SiC: DENIS (Development of low dislocation density gallium nitride substrates) and ESCAPEE (Establish silicon carbide application in power electronics in Europe). It also participated to the JESICA (Joint European silicon carbide activity).

www.crhea.cnrs.fr

The Center of Research on Hetero-Epitaxial growth and Applications (CRHEA) is a CNRS laboratory and employs about 50 people. CRHEA R&D activities focus on the epitaxial growth of compound semiconductor structures and their structural, electrical and optical characterization. CRHEA is currently working on GaN, ZnO, GaInNAs and SiC based compounds. Devices are fabricated based on the material grown at CRHEA either at CRHEA itself or through national or international collaborations. Fields of application of materials and devices include optoelectronics (visible and UV light emitters, Ultraviolet detection, infrared lasers at 1.5 µm for telecommunications), non linear optics, electronics (high power high frequency transistors based on GaN or SiC).
CRHEA has been involved in the past or still is involved in many European R&D projects. As far as GaN and SiC materials are concerned, let us cite Rainbow (blue GaN emitters), Agetha (green GaN emitters for plastic optical fibers), Aniset (development of GaN MBE equipment), Euronim (GaN material), Flasic (SiC material), Clermont 1 and Clermont 2 (GaN microcavities).